To decrease the I OFF, an ultra-thin (7 nm) channel layer is used for Si nanosheet FETs on 12-inch wafers. The I OFF leakage is the crucial issue for highly scaled 3 and 2 nm node silicon (Si) transistors.
The crucially large I ON/I OFF was achieved using an ultra-thin (7 nm) nanosheet GeSn.
s, is obtained in a thicker GeSn channel, there is a tradeoff with a poor I OFF, with an I ON/I OFF of only 75. Although an even larger hole mobility, of 103.8 cm 2/V s), a sharp SS (311 mV/dec), and a large I ON/I OFF value (8.9 × 10 6). In this paper, we report poly-GeSn pTFT with a high μ FE (41.8 cm 2/V Alternatively, GeSn material also has a small hole effective mass and a direct energy bandgap. Although single-hole energy bands and small hole effective masses have been reported in metal-oxide SnO materials, the hole mobility of pTFTs is restrained by the requisite low-temperature process. s, which remains a basic challenge for CTFTs. However, because of the fundamental physical restrictions, the mobility of oxide pTFTs is generally less than 10 cm 2/V s a sharp turn-on subthreshold swing ( SS), of ~100 mV/dec and a large on-current/off-current (I ON/I OFF) ratio, of >10 6, has been achieved using a SnO 2 channel material. 
For oxide nTFTs, excellent device performance with a high field-effect mobility (μ FE), of ~100 cm 2/V To realize system-on-panel (SoP) and monolithic three-dimensional (3D) integrated circuits (ICs), high-performance n-type and p-type TFT devices (nTFT and pTFT, respectively) are required to form low-DC-power complementary TFTs (CTFTs). Thin-film transistors (TFTs) have been investigated intensively in the past few decades because of their ultra-low-energy-using process, usage of a small amount of material, and light transparency. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations.
s) was obtained with a thicker GeSn channel, the I OFF increased rapidly and the poor I ON/I OFF (75) was unsuitable for transistor applications. Although an even higher hole mobility (103.8 cm 2/V 
This remarkably high I ON/I OFF is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm.
s a sharp turn-on subthreshold slope ( SS), of 311 mV/dec, for low-voltage operation and a large on-current/off-current (I ON/I OFF) value, of 8.9 × 10 6. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μ FE), of 41.8 cm 2/V s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm 2/V High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits.
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